Assessment of transport parameters for the design of high speed Si/SiGe HBTs with compositionally graded base

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 137-140

  Weller, J ^a   Jorke, H ^a   Strohm, K ^a   Luy, J F ^a   Kibbel, H ^a   Herzog, H J ^a   Sauer, R ^b  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

Minority diffusion constant; Si SiGe heterojunction bipolar transistor

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

MINORITY DIFFUSION CONSTANT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032315499     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01311-X     Document Type: Article

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