-
1
-
-
0022722288
-
Reduction of lasing threshold current density by the lowering of valence band effective mass
-
E. Yablonovitch and E. O. Kane, "Reduction of Lasing Threshold Current Density by the Lowering of Valence Band Effective Mass", J. Lightwave Technol. LT-4, 504 (1986).
-
(1986)
J. Lightwave Technol.
, vol.LT-4
, pp. 504
-
-
Yablonovitch, E.1
Kane, E.O.2
-
3
-
-
0031212505
-
Recent advances in Sb-based midwave-infrared lasers
-
T. C. Hasenberg, R. H. Miles, A. R. Kost, and L. West, "Recent advances in Sb-based midwave-infrared lasers", J. Quantum Electron. QE-33, 1403 (1997).
-
(1997)
J. Quantum Electron.
, vol.QE-33
, pp. 1403
-
-
Hasenberg, T.C.1
Miles, R.H.2
Kost, A.R.3
West, L.4
-
4
-
-
0029483778
-
Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
-
D. H. Chow, R. H. Miles, T. C. Hasenberg, A. R. Kost, Y.-H. Zhang, H. L. Dunlap, and L. West, "Mid-wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices", Appl. Phys. Lett. 67, 3700 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 3700
-
-
Chow, D.H.1
Miles, R.H.2
Hasenberg, T.C.3
Kost, A.R.4
Zhang, Y.-H.5
Dunlap, H.L.6
West, L.7
-
5
-
-
0029638629
-
Type II quantum-well lasers for the mid-wavelength infrared
-
J. R. Meyer, C. A. Huffman, F. J. Bartoli, and L. R. Ram-Mohan, "Type II quantum-well lasers for the mid-wavelength infrared", Appl. Phys. Lett. 67, 757 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 757
-
-
Meyer, J.R.1
Huffman, C.A.2
Bartoli, F.J.3
Ram-Mohan, L.R.4
-
6
-
-
0030568681
-
High CW power (>200mW/facet) at 3.4μm from InAsSb/InAlAsSb strained quantum well diode lasers
-
H. K. Choi, G. W. Turner, and M. J. Manfra, "High CW power (>200mW/facet) at 3.4μm from InAsSb/InAlAsSb strained quantum well diode lasers", Electron. Lett. 32, 1296 (1996).
-
(1996)
Electron. Lett.
, vol.32
, pp. 1296
-
-
Choi, H.K.1
Turner, G.W.2
Manfra, M.J.3
-
7
-
-
0030142623
-
175K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5μm
-
H. K. Choi, G. W. Turner, M. J. Manfra, and M. K. Connors, "175K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5μm", Appl. Phys. Lett. 68, 2936 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2936
-
-
Choi, H.K.1
Turner, G.W.2
Manfra, M.J.3
Connors, M.K.4
-
8
-
-
36448999262
-
Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm
-
S. R. Kurtz, R. M. Biefeld, A. A. Allerman, A. J. Howard, M. H. Crawford, and M. W. Pelczynski, "Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm", Appl. Phys. Lett. 88, 1332 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.88
, pp. 1332
-
-
Kurtz, S.R.1
Biefeld, R.M.2
Allerman, A.A.3
Howard, A.J.4
Crawford, M.H.5
Pelczynski, M.W.6
-
9
-
-
0031168918
-
Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers
-
M. E. Flatté, J. T. Olesberg, S. A. Anson, T. F. Boggess, T. C. Hasenberg, R. H. Miles, and C. H. Grein, "Theoretical Performance of Mid-Infrared Broken-Gap Multilayer Superlattice Lasers", Appl. Phys. Lett. 70, 3212 (1997). The layer widths of the four-layer superlattice given in this reference are in error - in fact they should be the same as those of the superlattice considered here.
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 3212
-
-
Flatté, M.E.1
Olesberg, J.T.2
Anson, S.A.3
Boggess, T.F.4
Hasenberg, T.C.5
Miles, R.H.6
Grein, C.H.7
-
10
-
-
84894019851
-
Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations
-
M. E. Flatté, C. H. Grein, and H. Ehrenreich, "Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations", Appl. Phys. Lett. in press.
-
Appl. Phys. Lett.
-
-
Flatté, M.E.1
Grein, C.H.2
Ehrenreich, H.3
-
11
-
-
0029530615
-
Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes
-
C. H. Grein, P. M. Young, M. E. Flatté, and H. Ehrenreich, "Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes", J. Appl. Phys. 78, 7143 (1995).
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 7143
-
-
Grein, C.H.1
Young, P.M.2
Flatté, M.E.3
Ehrenreich, H.4
-
12
-
-
0029394401
-
Theoretical performance limits of 2.1 - 4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers
-
M. E. Flatté, C. H. Grein, H. Ehrenreich, R. H. Miles, and H. Cruz, "Theoretical performance limits of 2.1 - 4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers", J. Appl. Phys. 78, 4552 (1995).
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 4552
-
-
Flatté, M.E.1
Grein, C.H.2
Ehrenreich, H.3
Miles, R.H.4
Cruz, H.5
-
13
-
-
0000447875
-
Generalized superlattice K · p theory and intersubband optical transitions
-
M. E. Flatté, P. M. Young, L.-H. Peng, and H. Ehrenreich, "Generalized superlattice K · p theory and intersubband optical transitions", Phys. Rev. B 53, 1963 (1996).
-
(1996)
Phys. Rev. B
, vol.53
, pp. 1963
-
-
Flatté, M.E.1
Young, P.M.2
Peng, L.-H.3
Ehrenreich, H.4
-
14
-
-
0003367212
-
-
edited by K.-H. Helluege and O. Madelung, Landolt-Börnstein, New Series, Group III, (Springer-Verlag, Berlin)
-
O. Madelung, in Semiconductors, Physics of Group IV Elements and III- V Compounds, edited by K.-H. Helluege and O. Madelung, Landolt-Börnstein, New Series, Group III, Vol. 17, Pt. a (Springer-Verlag, Berlin, 1982).
-
(1982)
Semiconductors, Physics of Group IV Elements and III- V Compounds
, vol.17
, Issue.PART A
-
-
Madelung, O.1
-
15
-
-
84894020767
-
-
edited by K.-H. Helluege and O. Madelung, Landolt-BÖrnstein, New Series, Group III, (Springer-Verlag, Berlin)
-
O. Madelung in Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, edited by K.-H. Helluege and O. Madelung, Landolt-BÖrnstein, New Series, Group III, Vol. 22, Pt. a (Springer-Verlag, Berlin, 1987).
-
(1987)
Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds
, vol.22
, Issue.PART A
-
-
Madelung, O.1
-
16
-
-
84894013326
-
-
unpublished
-
M. E. Flatté, C. H. Grein, T. C. Hasenberg, S. A. Anson, D.-J. Jang, J. T. Olesberg, and T. F. Boggess, "Carrier recombination rates in narrow-gap semiconductor superlattices", unpublished.
-
Carrier Recombination Rates in Narrow-gap Semiconductor Superlattices
-
-
Flatté, M.E.1
Grein, C.H.2
Hasenberg, T.C.3
Anson, S.A.4
Jang, D.-J.5
Olesberg, J.T.6
Boggess, T.F.7
|