Low threshold 1.3μm InAsP n-type modulation doped MQW lasers grown by gas-source molecular-beam epitaxy

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 888-890

  Shimizu, H ^a   Kumada, K ^a   Yamanaka, N ^a   Iwai, N ^a   Mukaihara, T ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0032047668     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980662     Document Type: Article

References (8)

1. UOMI, K.: 'Modulation-doped multi-quantum well (MD-MQW) lasers. I. Theory', Jpn. J. Appl. Phys., 1990, 29, pp. 81-87
2. NAKAHARA, K., UOMI, K., TSUCHIYA, T., NIWA, A., HAGA, T., and TANIWATARI, T.: '1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers', IEEE J. Sel. Top. Quantum Electron., 1997, 3, pp. 166-172
3. YAMAMOTO, T., WATANABE, T., IDE, S., TANANKA, K., NOBUHARA, H., and WAKAO, K.: 'Low threshold current density 1.3μm strained-layer quantum-well lasers using n-type modulation doping', IEEE Photonics Technol. Lett., 1994, 6, pp. 1165-1166
4. 1-y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition', IEEE J. Quantum Electron., 1993, 29, pp. 1528-1535
5. YAMAMOTO, M., YAMAMOTO, N., and NAKANO, J.: 'MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3μm lasers', IEEE J. Quantum Electron., 1994, 30, pp. 554-561
6. SHIMIZU, H., KUMADA, K., YAMANAKA, N., IWAI, N., MUKAIHARA, T., NISHIKATA, K., and KASUKAWA, A.: 'Low threshold 1.3μm InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy'. To be presented at IPRM'98, ThP-52
7. THIAGARAJAN, P., BERNUSSI, A.A., TEMKIN, H., and ROBINSON, G.Y.: 'Growth of 1.3μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy', Appl. Phys. Lett., 1995, 67, pp. 3676-3678
8. xAs/AlInAs/InP and application to 1.55μm multi-quantum-well lasers', J. Cryst. Growth, 1995, 150, pp. 1328-1332