1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 166-172

  Nakahara, Kouji ^a,b,c,d   Uomi, Kaszuhisa ^a,d,e,f,g   Tsuchiya, Tomonobu ^a,d,h   Niwa, Atsuko ^a,d,i   Haga, Tohru ^a,d,j   Taniwatari, Tsuyoshi ^a,d  

^a HITACHI LTD   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^e HIROSHIMA UNIVERSITY   (Japan)

^f TELCORDIA TECHNOLOGIES   (United States)

^g R and D Group   (Belgium)

^h UNIVERSITY OF TSUKUBA   (Japan)

ⁱ OCHANOMIZU UNIVERSITY   (Japan)

^j TOHOKU UNIVERSITY   (Japan)

more..

Author keywords

Multiquantum well lasers

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; STRAIN;

INTERNAL LOSSES; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0031108795     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605650     Document Type: Article

References (20)

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