Submilliampere threshold current in 1.3μm InAsP n-type modulation doped MQW lasers grown by gas source molecular beam epitaxy

Electronics Letters

Volumn 34, Issue 16, 1998, Pages 1591-1593

  Shimizu, H ^a   Kumada, K ^a   Yamanaka, N ^a   Iwai, N ^a   Mukaihara, T ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GAS SOURCE MOLECULAR BEAM EPITAXY; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0032490787     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981076     Document Type: Article

References (8)

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2. ZAH, C.E., BHAT, R., FAVIRE, F.J., Jr., MENOCAL, S.G., ANDREADAKIS, N.C., CHEUNG, K.W., HWANG, D.D., KOZA, M.A., and LEE, T.P.: 'Low-threshold 1.5μm compressive-strained multiple- and single-quantum-well lasers', IEEE J. Quantum Electron., 1991, 27, pp. 1440-1450
3. OSINSKI, J.S., GRODZINSKI, P., ZOU, Y., DAPKUS, P.D., KARIM, Z., and TANGUAY, A.R., Jr.: 'Low threshold current 1.5μm buried heterostructure lasers using strained quaternary quantum wells', IEEE Photonics Technol. Lett., 1992, 4, pp. 1313-1315
4. UOMI, K.: 'Modulation-doped multi-quantum well (MD-MQW) lasers. I. Theory', Jpn. J. Appl. Phys., 1990, 29, pp. 81-87
5. NAKAHARA, K., UOMI, K., TSUCHIYA, T., NIWA, A., HAGA, T., and TANIWATARI, T.: '1.3μm InGaAsP-Inp n-type modulation-doped strained multiquantum-well lasers', IEEE J. Sel. Topics Quantum Electron., 1997, 3, pp. 166-172
6. YAMAMOTO, T., WATANABE, T., IDE, S., TANAKA, K., NOBURARA, R., and WAKAO, K.: 'Low threshold current density 1.3μm strained-layer quantum-well lasers using n-type modulation doping', IEEE Photonics Technol. Lett., 1994, 6, pp. 1165-1166
7. SHIMIZU, R., KUMADA, K., YAMANAKA, N., IWAI, N., MUKAIHARA, T., and KASUKAWA, A.: 'Low threshold 1.3μm InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy', Electron. Lett., 1998, 34, pp. 888-890
8. TRIAGARAJAN, P., GIUDICE, G.E., TEMKIN, H., and ROBINSON, G.Y.: 'Gas-source molecular beam epitaxial growth of low threshold current 1.3μm InAsP/InGaAsP lasers', J. Crystal Growth, 1997, 175, pp. 945-947