Integrated GaInAsP laser diodes with monitoring photodiodes through semiconductor/air Bragg reflector (SABAR)

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 469-475

  Mukaihara, Toshikazu ^a   Yamanaka, Nobumitsu ^a   Iwai, Norihiro ^a   Funabashi, Masaki ^a   Arakawa, Satoshi ^a   Ishikawa, Takuya ^a   Kasukawa, Akihiko ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FIBER OPTIC NETWORKS; INTEGRATED CIRCUIT LAYOUT; LASER MODES; LASER RESONATORS; LIGHT REFLECTION; MIRRORS; OPTICAL WAVEGUIDES; OPTIMIZATION; PHOTODIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS;

BRAGG REFLECTOR; INTEGRATED LASERS; LIGHT OUTPUT POWER; MODE FIELD CONVERTERS; RIDGE WAVEGUIDE LASER; THRESHOLD CURRENT;

INTEGRATED OPTOELECTRONICS;

EID: 0033123731     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788407     Document Type: Article

References (14)

1. T. L. Kock and U. Koren, "Semiconductor photonic integrated circuits," IEEE J. Quantum Electron., vol, 27, pp. 641-653, 1991.
2. Y. Tohmori, F. Kano, M. Oishi, Y. Kondo, M. Nakao, and K. Oe, "Narrow linewidth and low chirping characteristics in high power operating butt-jointed DBR lasers grown by MOVPE," Electron. Lett., vol. 24, pp. 1481-1483, 1988.
3. H. Soda, M. Furutsu, K. Sato, N. Okazaki, Y. Yamazaki, H. Nishimoto, and H. Ishikawa, "High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source," Electron. Lett., vol. 26, pp. 9-10, 1990.
4. T. Kato, T. Sasaki, N. Kida, K. Komatsu, and I. Mito, "Novel MQW DFB laser diode/modulator integrated light source using bandgap energy control epitaxial growth technique," in Tech. Dig. ECOC'91, 1991, vol. WeB7-2.
5. A. Kasukawa, K. Nishikata, N. Yamanaka, S. Arakawa, N. Iwai, T. Mukaihara, and T. Matsuda, "Structural dependence of 1.3-μm narrow-beam lasers fabricated by selective MOCVD growth," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 1413-1420, 1998.
6. K. C. Shin, M. Tamura, A. Kasukawa, N. Serizawa, S. Kurihashi, S. Tarnura, and S. Arai, "Low threshold current density operation of GaInAsP-InP laser with multiple reflector microcavities," IEEE Photon. Technol. Lett., vol. 7, pp. 1119-1121, 1991.
7. T. Baba, M. Hamasaki, N. Watanabe, P. Kaewplung, A. Matsutani, T. Mukaihara, F. Koyama, and K. Iga, "A novel short-cavity laser with deep-grating distributed Bragg reflectors," Jpn. J. Appl. Phys., vol. 35, pp. 1390-1394, 1996.
8. Y. Yuan, T. Brock, P. Bahattacharya, C. Caneau, and R. Bhat, "Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors," IEEE Photon. Technol. Lett., vol. 9, pp. 881-883, 1997.
9. R. Jambunathan and J. Singh, "Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasers," IEEE J. Quantum Electron., vol. QE-33, pp. 1180-1189, 1997.
10. T. Mukaihara, N. Yamanaka, N. Iwai, K. Nishikata, T. Ishikawa, and A. Kasukawa, "1.3 μm GaInAsP lasers with Bragg reflector consisted of semiconductor and air," in Tech. Dig. LEOS'97, 1997, paper TuQ2.
11. _, "1.3 μm GaInAsP lasers integrated with butt-coupled waveguide and high reflective semiconductor/air Bragg reflector (SABAR)," Electron. Lett., vol. 34, pp. 882-883, 1998.
12. T. Namegaya, A. Kasukawa, N. Iwai, and T. Kikuta, "High temperature operation of GaInAsP/InP compressive strained-layer quantum well laser diodes," Electron. Lett., vol. 29, pp. 392-393, 1992.
13. K. Iga, K. Wakao, and T Kunikane, "Mode reflectivity of tilted mirrors in semiconductor lasers with etched facets," Appl. Opt., vol. 20, pp. 2367-2371, 1981.
14. N. Iwai, T. Mukaihara, H. Shimizu, N. Yamanaka, K. Kumada, and A. Kasukawa, "Low threshold current 1.3 μm InAsP QW ACIS lasers," Electron. Lett., vol. 34, pp. 890-891, 1998.