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Journal of Electronic Materials

Volumn 26, Issue 9, 1997, Pages 1053-1057

Structural stability of low temperature grown InGaAs/GaAs heterostructure

(4) Park, Chanro a Park, C G a Lee, Chae Deok a,b Noh, S K a,b

a Pohang University of Science and Technology (POSTECH) (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

Author keywords

As precipitate; Dislocation generation; Low temperature growth

Indexed keywords

EID: 3943056118 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-997-0243-0 Document Type: Article

Times cited : (4)

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