Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 PART A, 1996, Pages

  Chen, Nuofu ^a   Wang, Yutian ^a   He, Hongjia ^a   Lin, Lanying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

As interstitial couples; As interstitials; Gallium arsenide; Lattice parameter; Low temperature; Molecular beam epitaxy; X ray rocking curve

Indexed keywords

ANNEALING; ARSENIC; CRYSTAL LATTICES; DECOMPOSITION; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH;

ARSENIC INTERSTITIAL COUPLES; X RAY ROCKING CURVE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030262714     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1238     Document Type: Article

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