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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 A, 1996, Pages 5955-5963

Characterization of crystallinity in low-temperature-grown GaAs layers by Raman scattering and time-resolved photoreflectance measurements

(8) Abe, Hajime a Harima, Hiroshi a Nakashima, Shin Ichi a Tani, Masahiko b Sakai, Kiyomi b Tokuda, Yasunori c Kanamoto, Kyozo c Abe, Yuji c

a OSAKA UNIVERSITY (Japan)

b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY (Japan)

c MITSUBISHI ELECTRIC CORPORATION (Japan)

Author keywords

As preclpitates; LT GaAs; Optical response; Orientational ordering; Raman spectroscopy; TEM micrograph; Time resolved photoreflectance measurement; Ultrafast carrier lifetime

Indexed keywords

OPTICAL RESPONSE; ORIENTATIONAL ORDERING; TIME RESOLVED PHOTOREFLECTANCE MEASUREMENTS; ULTRAFAST CARRIER LIFETIME;

ANNEALING; CHARGE CARRIERS; CRYSTAL ORIENTATION; FILM GROWTH; LIGHT REFLECTION; POLARIZATION; POLYCRYSTALS; PRECIPITATION (CHEMICAL); RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 0030394738 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.5955 Document Type: Article

Times cited : (15)

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