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Volumn 173, Issue 1-2, 1997, Pages 1-4
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Selective meltback etching of Gan layers in liquid-phase electroepitaxial technique
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Author keywords
[No Author keywords available]
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Indexed keywords
ETCHING;
LIQUID PHASE EPITAXY;
SEMICONDUCTING GALLIUM ARSENIDE;
SOLUTIONS;
GALLIUM NITRIDE;
LIQUID PHASE ELECTROEPITAXY (LPEE);
SELECTIVE MELTBACK ETCHING;
NITRIDES;
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EID: 0031547045
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(96)00835-4 Document Type: Article |
Times cited : (11)
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References (19)
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