메뉴 건너뛰기




Volumn 173, Issue 1-2, 1997, Pages 1-4

Selective meltback etching of Gan layers in liquid-phase electroepitaxial technique

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SOLUTIONS;

EID: 0031547045     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00835-4     Document Type: Article
Times cited : (11)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.