Electronic properties of monolayer steps on GaAs (0 0 1) surfaces studied by scanning tunneling microscopy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 304-309

  Kanisawa, Kiyoshi ^a   Yamaguchi, Hiroshi ^a   Horikoshi, Yoshiji ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRONIC PROPERTIES; FERMI LEVEL; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DEVICE MODELS;

ENERGETICAL STABILITY; ULTRAHIGH-VACUUM SCANNING TUNNELING MICROSCOPY (UHV-STM);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031141887     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00943-8     Document Type: Article

References (10)

1. M.D. Pashley and K.W. Haberern, Phys. Rev. Lett. 67 (1991) 2697.
2. S. Chang, L.J. Brillson, Y.J. Kime, D.S. Rioux, P.D. Kirchner, G.D. Pettit and J.M. Woodall, Phys. Rev. Lett. 64 (1990) 2551.
3. W.A. Harrison, J. Vac. Sci. Technol. 16 (1979) 1492.
4. M.D. Pashley, Phys. Rev. B 40 (1989) 10481.
5. D.J. Chadi, J. Vac. Sci. Technol. A 5 (1987) 834.
6. K. Kanisawa, H. Yamaguchi and Y. Horikoshi, Phys. Rev. B 54 (1996) 4428.
7. S.B. Zhang and A. Zunger, Mater. Sci. Eng. B 30 (1995) 127.
8. W.A. Harrison, Surf. Sci. 55 (1976) 1.
9. H. Yamaguchi and Y. Horikoshi, Phys. Rev. B 53 (1996) 4565.
10. M.D. Pashley, K.W. Haberern, R.M. Feenstra and P.D. Kirchner, Phys. Rev. B 48 (1993) 4612.