Thermal stability of fluorine doped silicon oxide films formed by ECRCVD with SiF4 and O2 gases

Materials Research Society Symposium - Proceedings

Volumn 443, Issue , 1997, Pages 119-125

  Lee, Seoghyeong ^a   Yoo, Jae Yoo,n ^a   Park, Jong Wan ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES OF SOLIDS; DOPING (ADDITIVES); ELECTRON CYCLOTRON RESONANCE; FLUORINE; OXYGEN; PLASMA APPLICATIONS; SILICA; THERMODYNAMIC STABILITY; ULSI CIRCUITS;

CAPACITANCE VOLTAGE CHARACTERISTICS; MOISTURE ABSORPTION;

DIELECTRIC FILMS;

EID: 0030655488     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)