Characterization of Si/Ge interfaces by diffuse X-ray scattering in the region of total external reflection

Physica B: Condensed Matter

Volumn 221, Issue 1-4, 1996, Pages 44-52

  Schlomka, J P ^a   Fitzsimmons, M R ^b   Pynn, R ^b   Stettner, J ^b   Seeck, O H ^b   Tolan, M ^b   Press, W ^b  

^a UNIVERSITY OF KIEL   (Germany)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTROMAGNETIC WAVE REFLECTION; ELECTROMAGNETIC WAVE SCATTERING; FILM GROWTH; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; VAPOR DEPOSITION; X RAY ANALYSIS;

DIFFUSE X RAY SCATTERING; DISTORTED WAVE BORN APPROXIMATION; TOTAL EXTERNAL REFLECTION;

INTERFACES (MATERIALS);

EID: 0030563009     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-4526(95)00903-5     Document Type: Article

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