Damage production in ion implanted III-V compounds: A comparative study

Materials Science Forum

Volumn 248-249, Issue , 1997, Pages 261-265

  Wendler, E ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Critical Temperatures; Damage Production; GaAs; GaP; InAs; InP; Ion Implantation; Rutherford Backscattering Analysis

Indexed keywords

ION IMPLANTATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DAMAGE PRODUCTION; GALLIUM PHOSPHIDE; INDIUM ARSENIDE;

SEMICONDUCTOR MATERIALS;

EID: 0030662879     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Review

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