Optical study of the influence of oxygen on the synthesis of SiC buried layer in Cz-Si and Fz-Si

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3359, Issue , 1997, Pages 375-378

  Yukhimchuk, V A ^a   Melnik, V P ^a   Romanjuk, B N ^a   Popov, V G ^a   Klyui, N I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Infrared spectroscopy; Ion implantation; Raman scattering; SiC

Indexed keywords

COMPOSITION EFFECTS; COMPRESSIVE STRESS; ELECTRON SPIN RESONANCE SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; LIGHT ABSORPTION; NUCLEATION; OXYGEN; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON CARBIDE; SYNTHESIS (CHEMICAL);

EXCITING RADITAION; ION BEAM SYNTHESIS;

SILICON WAFERS;

EID: 0031394293     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.306247     Document Type: Conference Paper

References (4)

1. SiC buried layer formation induced by ion implantation
2. Raman scattering measurements of silicon-on-insulator substrates formed by high-dose oxygen-ion implantation