SiC buried layer formation induced by ion implantation

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 211-216

  Klyui, N I ^a   Kruger D ^b   Romanjuk, B N ^a   Litovchenko, V G ^a   Richter, H ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBIDES; INFRARED SPECTROSCOPY; ION IMPLANTATION; IONS; LIGHT ABSORPTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SILICON NITRIDE; X RAY DIFFRACTION ANALYSIS;

ABSORPTION MEASUREMENTS; AUGER ELECTRON SPECTROSCOPIES (AES); CARBON CONCENTRATIONS; CARBON-IMPLANTATION; HIGH-DOSE ION IMPLANTATION; LAYER CHARACTERIZATION; POSTIMPLANTATION ANNEALING; SILICON SUBSTRATES;

WIDE BAND GAP SEMICONDUCTORS;

EID: 17544372396     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (4)

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2. K.J.Reeson, J.Stoemenos and P.LF.Hemment, Thin Solid Films, 191, 147 (1990).
3. A. Nejim, P.LF.Hemment and J.Stoemenos, Proceed, of 6th Int. Symp. on SOI Technology and Devices, Ed. by S.Cristoloveanu, v.94-11, (1994), p.167-172.
4. B. N. Romanyuk, V.G.Popov, V.G.Litovchenko et al., Physica Poluprovodnikov i Dielektrikov, 29, 166 (1995).