Defects produced in silicon by reactive ion etching

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 371-376

  Erzgraber H B ^a   Richter, H H ^a   Aminpur, M A ^a   Wolff, A ^a   Blum, K ^a  

^a IHP   (Germany)

Author keywords

Annealing Procedures; Broad Band Luminescence; Etch Plasma; Excitonic Defect Complex; Photoluminescence; Reactive Ion Etching; Residual Damage

Indexed keywords

ANNEALING; BORON; BROMINE COMPOUNDS; IONS; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION DAMAGE; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; HELIUM; PLASMA ETCHING; SILICON WAFERS;

ANNEALING CONDITION; ANNEALING PROCEDURES; BORON-DOPED SILICON; BROAD BANDS; DEFECT COMPLEX; INDUCED DAMAGE; INTRINSIC POINT DEFECTS; RESIDUAL DAMAGE;

SILICON WAFERS; POINT DEFECTS;

EXCITONIC DEFECT COMPLEX; RESIDUAL DAMAGE;

EID: 16944366305     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.371     Document Type: Article

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