Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies

Journal of Physics D: Applied Physics

Volumn 32, Issue 13, 1999, Pages 1435-1442

  El Hdiy, A ^a   Ziane, Dj ^a   Nebel, F ^a   Vuillaume, D ^b   Jourdain, M ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CARRIER CONCENTRATION; ELECTRODES; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; STRESSES; SUBSTRATES; TRANSISTORS;

ELECTRON INJECTION; FIELD POLARITY; METAL OXIDE SILICON DEVICES;

ELECTRIC FIELDS;

EID: 0032686021     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/32/13/301     Document Type: Article

References (28)

1. Horiguchi S, Kobayachi T and Saito K 1985 J. Appl. Phys. 58 387-91
2. DiMaria D J, Cartier E and Arnold D 1993 J. Appl. Phys. 73 3367-84
3. Dumin D J, Cooper J R, Dickerson K J and Brown J A 1992 Solid State Electron. 35 515-22
4. Nissan-Cohen Y, Shappir J and Frohman-Bentchkowsky D 1983 IEEE Technical Digest IEDM83 183-5
5. Feigl F J, Young D R, DiMaria D J, Lai S K and Calise J 1981 J. Appl. Phys. 52 5665-82
6. DiMaria D J 1990 J. Appl. Phys. 68 5234-46
7. Gale R, Feigl F J, Magee C W and Young D R 1983 J. Appl. Phys. 54 6938-42
8. DiMaria D J and Stasiak J W, 1989 J. Appl. Phys. 65 2342-56
9. Inoue M, Shimada M and Shirafuji A 1996 Japan. J. Appl. Phys. 35 5921-4
10. DiMaria D J 1996 Appl. Phys. Lett. 68 3004-6
11. Apte P P and Saraswat K C 1994 IEEE Trans. Electron Devices 41 1595-601
12. Apte P P and Saraswat K C 1993 IEEE Trans. Electron Devices 14 512-4
13. Fazan P, Dutoit M, Martin C and Ilegems M 1987 Solid State Electron. 30 829-34
14. Wolters D R and Van der School J J 1985 Philips J. Res. 40 137-63
15. Hokari Y 1988 IEEE Trans. Electron Devices 35 1299-304
16. El-Hdiy A, Salace G, Petit C, Jourdain M and Vuillaume D 1993 J. Appl. Phys. 74 1124-30
17. El-Hdiy A, Salace G, Jourdain, M Meinertzhagen A and Vuillaume D 1997 Thin Solid Films 296 106-9
18. Weinberg Z A and Fischetti M V 1985 J. Appl. Phys. 57 443-52
19. Weinberg Z A, Fischetti M V and Nissan-Cohen Y 1986 J. Appl. Phys. 59 824-32
20. Fischetti M V 1985 Phys. Rev. B 31 2099
21. Gao X and Yee S S 1994 J. Appl. Phys. 76 5795-9
22. DiMaria D J, Buchanan D A, Stathis J H and Stahlbush R E 1995 J. Appl. Phys. 77 2032-40
23. Groeseneken G, Macs H E, Beltran N and DeKeersmaecker R F 1984 IEEE Trans. Electron Devices 31 42-52
24. Buchanan D A, Marwick A D, DiMaria D J and Dori L 1994 J. Appl. Phys. 76 3595-608
25. Krauser J, Wulf F and Braünig D B 1995 J. Non-Cryst. Solids 187 264-9
26. DiMaria D J, Arnold D and Cartier E 1992 Appl. Phys. Lett. 60 2118-20
27. DiMaria D J, Cartier E and Buchanan D A 1996 J. Appl. Phys. 80 304-17
28. Vuillaume D, Mir A, Bouchakour R, Jourdain M, El-Hdiy A and Salace G 1993 J. Appl. Phys. 73 277-88