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Volumn 296, Issue 1-2, 1997, Pages 106-109

Stress field polarity effect on defects generation in thin silicon dioxide films

Author keywords

Defects; Field polarity; Silicon dioxide; Stress

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SILICA;

FIELD POLARITY; FOWLER-NORDHEIM ELECTRIC FIELD STRESS;

THIN FILMS;

EID: 0031099383 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09349-2 Document Type: Article

Times cited : (5)

References (16)

1
- 0000284301
- S. Horiguchi, T. Kobayachi and K. Saito, J. Appl. Phys., 58 (1985) 387.
- (1985) J. Appl. Phys. , vol.58 , pp. 387
- Horiguchi, S.¹ Kobayachi, T.² Saito, K.³

2
- 21544458715
- D.J. DiMaria, E. Cartier and D. Arnold, J. Appl. Phys., 73 (1993) 3367.
- (1993) J. Appl. Phys. , vol.73 , pp. 3367
- DiMaria, D.J.¹ Cartier, E.² Arnold, D.³

3
- 0026852586
- D.J. Dumin, J.R. Cooper, K.J. Dickerson and G.A. Brown, Solid. State. Electron., 55 (1992) 515.
- (1992) Solid. State. Electron. , vol.55 , pp. 515
- Dumin, D.J.¹ Cooper, J.R.² Dickerson, K.J.³ Brown, G.A.⁴

4
- 0041079922
- Y. Nissan-Cohen, J. Shappir and D. Frohman-Bentchkowsky, IEEE, IEDM83 (1983) 183.
- (1983) IEEE , vol.IEDM83 , pp. 183
- Nissan-Cohen, Y.¹ Shappir, J.² Frohman-Bentchkowsky, D.³

5
- 0028513959
- P.P. Apte and K.C. Sarawat, IEEE Trans. Electron. Dev., 41 (1994) 1595.
- (1994) IEEE Trans. Electron. Dev. , vol.41 , pp. 1595
- Apte, P.P.¹ Sarawat, K.C.²

6
- 0027700513
- P.P. Apte and K.C. Sarawat, IEEE Trans. Electron. Dev., 14 (1993) 512.
- (1993) IEEE Trans. Electron. Dev. , vol.14 , pp. 512
- Apte, P.P.¹ Sarawat, K.C.²

7
- 0001327792
- A. El-Hdiy, G. Salace, C. Petit, M. Jourdain and D. Vuillaume, J. Appl. Phys., 74 (1993) 1124.
- (1993) J. Appl. Phys. , vol.74 , pp. 1124
- El-Hdiy, A.¹ Salace, G.² Petit, C.³ Jourdain, M.⁴ Vuillaume, D.⁵

8
- 0023400405
- P. Fazan, M. Dutoit, C. Martin and M. Ilegems, Solid State Electron., 30 (1987) 829.
- (1987) Solid State Electron. , vol.30 , pp. 829
- Fazan, P.¹ Dutoit, M.² Martin, C.³ Ilegems, M.⁴

9
- 36449004024
- D.A. Buchanan, A.D. Marwick, D.J. DiMaria and L. Don, J. Appl. Phys., 76 (1994) 3595.
- (1994) J. Appl. Phys. , vol.76 , pp. 3595
- Buchanan, D.A.¹ Marwick, A.D.² DiMaria, D.J.³ Don, L.⁴

10
- 0001504864
- J. Krauser, F. Wulf and D.B. Braunig, J. Non-Cryst. Solids, 187 (1995) 264.
- (1995) J. Non-Cryst. Solids , vol.187 , pp. 264
- Krauser, J.¹ Wulf, F.² Braunig, D.B.³

11
- 0020930377
- R. Gale, F.J. Feigl, C.W. Magee and D.R. Young, J. Appl. Phys., 54 (1983) 6938.
- (1983) J. Appl. Phys. , vol.54 , pp. 6938
- Gale, R.¹ Feigl, F.J.² Magee, C.W.³ Young, D.R.⁴

12
- 0000143441
- D.J. DiMaria, D. Arnold and E. Cartier, Appl. Phys. Lett., 60 (1992) 2118.
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2118
- DiMaria, D.J.¹ Arnold, D.² Cartier, E.³

13
- 0019612331
- F.J. Feigl, D.R. Young, D.J. DiMaria, S.K. Lai and J. Calise, J. Appl. Phys., 52 (1981) 5665.
- (1981) J. Appl. Phys. , vol.52 , pp. 5665
- Feigl, F.J.¹ Young, D.R.² DiMaria, D.J.³ Lai, S.K.⁴ Calise, J.⁵

14
- 0039892889
- D. Vuillaume, A. Mir, R. Bouchakour, M. Jourdain, A. El-Hdiy and G. Salace, J. Appl. Phys., 73 (1993) 277.
- (1993) J. Appl. Phys. , vol.73 , pp. 277
- Vuillaume, D.¹ Mir, A.² Bouchakour, R.³ Jourdain, M.⁴ El-Hdiy, A.⁵ Salace, G.⁶

15
- 0021974650
- D.R. Wolters and J.J. Van der Schoot, Philips J. Res., 40 (1985) 137.
- (1985) Philips J. Res. , vol.40 , pp. 137
- Wolters, D.R.¹ Van Der Schoot, J.J.²

16
- 0024057331
- Hokari et al., Trans. Electron Diffraction, 35 (1988) 1299.
- (1988) Trans. Electron Diffraction , vol.35 , pp. 1299
- Hokari¹

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