High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semiinsulating-lnP buried structure

Electronics Letters

Volumn 35, Issue 16, 1999, Pages 1377-1379

  Yuda, M ^a   Kato, K ^a   Iga, R ^a   Mitsuhara, M ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC POTENTIAL; OPTICAL WAVEGUIDES; PHOTOCURRENTS; POLYIMIDES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL CONDUCTIVITY;

POLYIMIDE PASSIVATED MESA STRUCTURE; UNITRAVELLING CARRIER PHOTODIODE;

PHOTODIODES;

EID: 0032683849     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990961     Document Type: Article

References (7)

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2. MIYAMOTO, Y., YONEYAMA, M., HAGIMOTO, II., ISHIBASHI, T., and siHMizu, N.: 'Ultrahigh speed optical receiver with uni-travelingcarrier photodiode acting as a logic 1C driver'. Tech. Dig. CLEO/ Pacific'97, Makuhari, 1997, Paper PD2.11
3. cox, C.H.: 'Analog fiber-optic links with intrinsic gain', Microwave J., 1992, 35, (9), pp. 92-99
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5. SHIMIZU, N., WATANABE, N., FURUTA, T., and ISHIBASHI, T.: 'High-speed InP/InGaAs uni-traveling-carrier photodiodes with 3-dB bandwidth over ISOGHz'. Tech. Dig. Device Research Conf., 1997. Paper VI.B.-l
6. MURAMOTO, Y., KATO, K., MITSUHARA, M., NAKAJIMA, O., MATSUOKA, Y., SHIMIZU, N., and ISHIBASHI, T.: 'High-output-voltage, high speed, high efficiency uni-travelling carrier waveguide photodiode', Electron. Lett., 1998, 34, (1), pp. 122-123
7. WAKITA, K., KOTAKA, I., MATSUMOTO, S., IGA, R., KONDOU, S., and NOGUCHI, Y.: 'Very-high allowability of incidental optical power for polarization-insensitive InGaAs/InAlAs multiple quantum well modulators buried in semi-insulating InP', Jpn. J. Appl. Phys., 1998. 37, (1), pp. 1432-1435