Very-high-allowability of incidental optical power for polarization-insensitive InGaAs/InAlAs multiple quantum well modulators buried in semi-insulating InP

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1432-1435

  Wakita, Koichi ^a,b   Kotaka, Isamu ^a   Matsumoto, Shin Ichi ^a   Iga, Ryuzo ^a   Kondo, Susumu ^a   Noguchi, Yoshio ^a  

^a NTT CORPORATION   (Japan)

^b CHUBU UNIVERSITY   (Japan)

Author keywords

Buried heterostructure; High allowability; Modulator; MQW; Polarization insensitive; SIBH

Indexed keywords

EID: 0001316278     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1432     Document Type: Article

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