Uni-Traveling-Carrier Photodiodes

Optics InfoBase Conference Papers

Volumn , Issue , 1997, Pages 83-87

  Ishibashi, T ^a   Shimizu, N ^a   Kodama, S ^a   Ito, H ^a   Nagatsuma, T ^a   Furuta, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Detectors; Optoelectronics; Ultrafast Devices

Indexed keywords

INDIUM PHOSPHIDE; PHOTODIODES; SEMICONDUCTING INDIUM PHOSPHIDE;

ELECTRON VELOCITY OVERSHOOT; FABRICATED DEVICE; HIGH OUTPUT; OUTPUT SATURATION; PHOTORESPONSES; SATURATION CURRENT; SPACE CHARGE EFFECTS; ULTRAFAST DEVICES; ULTRAFAST PHOTODIODES; UNI-TRAVELING CARRIER PHOTODIODE;

III-V SEMICONDUCTORS;

EID: 84923928149     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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2. L. Y. Lin, M. C. Wu, T. Roh, T. A. Vang, R. E. Muller, D. L. Sivco, and A. Y. Cho, "Velocity-Matched Distributed Photodetectors with High-Saturation Power and Large Bandwidth, " IEEE Photon. Technol. Lett. Vol. 8, No. 10, pp. 1376-1378 (1996).
3. T. P. Pearsall, M. Piskorski, A. Brochet, and J. Chevrier, "A Ga rj.47Ino. 53As/InP Heterophotodiode with Reduced Dark Current, " IEEE J. Quantum Electron. Vol. QE-17, No. 2, pp. 255-259 (1981).
4. G. A. Davis, R. E. Weiss, R. A. LaRue, K. J. Williams, and R. D. Esmann, "A 920-1650-nm High-Current Photodetector, " IEEE Photon. Technol. Lett. Vol. 8, No. 10, pp. 1373-1375 (1996).
5. K. Kurishima, H. Nakajima, T. Kobayashi, Y. Matsuoka, and T. Ishibashi, "Fabrication and Characterization of High-Performance InP/InGaAs Double-Heterojunction Bipolar Transistors, " IEEE Trans. Electron Devices, Vol. 41, No. 8, pp. 13191326 (1994).
6. K. Kurishima, H. Nakajima, Y. K. Fukai, Y. Matsuoka, and T. Ishibashi, "Electron Velocity Overshoot Effect in Collector Depletion Layer of InP/InGaAs Heterojunction Transistors, " Jpn. J. Appl. Phys. 31, pp. L768-L770 (1992).