High-speed InP/InGaAs uni-traveling-carrier photodiodes with 3-dB bandwidth over 150 GHz

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 164-165

  Shimizu, Naofumi ^a   Watanabe, Noriyuki ^a   Furuta, Tomofumi ^a   Ishibashi, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CARRIER CONCENTRATION; FOURIER TRANSFORMS; LASER PULSES; LIGHT ABSORPTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SUBSTRATES;

STAIR LIKE POTENTIAL PROFILE; UNITRAVELING CARRIER PHOTODIODES (UTCPD);

PHOTODIODES;

EID: 0030651030     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)