Mapping of CdZnTe substrates and CdHgTe epitaxial layers by X-ray diffraction

Journal of Crystal Growth

Volumn 172, Issue 1-2, 1997, Pages 97-105

  Skauli, T ^a   Colin, T ^a   Lovold S ^a  

^a NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT FFI   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SEMICONDUCTING CADMIUM COMPOUNDS; X RAY DIFFRACTION;

CRYSTALLINITY; EPITAXIAL LAYERS; LATTICE PARAMETER; X RAY ROCKING CURVE;

SUBSTRATES;

EID: 0031546781     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00732-4     Document Type: Article

References (14)

1. P. Capper, in: Properties of Narrow Gap Cadmium-based Compounds, Ed. P. Capper (INSPEC, London, 1994) p. 501.
2. D.J. Williams, in: Properties of Narrow Gap Cadmium-based Compounds, Ed. P. Capper (INSPEC, London, 1994) p. 505.
3. P.F. Fewster and N.L. Andrew, J. Phys. D 28 (1995) A97.
4. P. Franzosi and S. Bernardi, in: Properties of Narrow Gap Cadmium-based Compounds, Ed. P. Capper (INSPEC, London, 1994) p. 521.
5. W.L. Bond, Acta Cryst. 13 (1960) 814.
6. W.J. Bartels, J. Vac. Sci. Technol. B 1 (1983) 338.
7. T. Skauli, T. Colin and S. Løvold, J. Vac. Sci. Technol. A 12 (1994) 274.
8. T. Colin and T. Skauli, to be published; T. Colin, D. Minsås, S. Gjøen, R. Sizmann and S. Løvold, Mater. Res. Soc. Symp. Proc. 340 (1994) 575.
9. E. Galdecka, in: International Tables for Crystallography, Ed. A.J.C. Wilson (Kluwer, Dordrecht, 1995) p. 450.
10. S.P. Tobin, F.T.J. Smith, P.W. Norton, J. Wu, M. Dudley, D. di Marzio and L.G. Casagrande, J. Electron. Mater. 24 (1995) 1189.
11. J. Hornstra and W.J. Bartels, J. Crystal Growth 44 (1978) 513.
12. T. Colin, T. Skauli, D.W. Minsås and S. Løvold, J. Crystal Growth 175 (1997), in press.
13. L. Sugiura, K. Shigenaka, F. Nakata and K. Hirahara, J. Crystal Growth 145 (1994) 547.
14. PC-HRS High Resolution Software (Philips Electronics N.V., The Netherlands, 1993).