Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3μm n-type modulation-doped strained multiquantum well lasers

Electronics Letters

Volumn 32, Issue 13, 1996, Pages 1200-1202

  Nakahara, K ^a   Uomi, K ^a   Tsuchiya, T ^a   Niwa, A ^a  

^a HITACHI LTD   (Japan)

Author keywords

Semiconductor junction lasers; Semiconductor quantum wells

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; LIGHT MODULATION; OPTICAL INTERCONNECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

CARRIER LIFETIME; DONOR CONCENTRATION; MULTIQUANTUM WELL LASERS; OPTICAL GAIN COEFFICIENT;

QUANTUM WELL LASERS;

EID: 0030165703     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960788     Document Type: Article

References (11)

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