InAs/GaAs quantum dot lasers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 727-730

  Schmidt, O G ^a   Kirstaedter, N ^a   Ledentsov, N N ^a   Bimberg, D ^a   Ustinov, V M ^a   Egorov, A Yu ^a   Zhukov, A E ^a   Maximov, M V ^a   Kop'ev, P S ^a   Alferov, Zh I ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC LOSSES; ELECTRON ENERGY LEVELS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

CONFINEMENT FACTOR; LASER QUALITY; QUANTUM DOT LASING; SINGLE LAYER QUANTUM DOTS (SLQD); TRIPLE LAYER QUANTUM DOTS (TLQD);

SEMICONDUCTOR LASERS;

EID: 0029700567     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)