Evolution of height distribution of Ge islands on Si(1 0 0)

Journal of Crystal Growth

Volumn 200, Issue 3, 1999, Pages 617-620

  Liu, J P ^a   Gong, Q ^a   Huang, D D ^a   Li, J P ^a   Sun, D Z ^a   Kong, M Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRONIC STRUCTURE; METALLIC FILMS; PARTICLE SIZE ANALYSIS; REACTION KINETICS; SEMICONDUCTING SILICON; STRAIN;

BIMODAL DISTRIBUTION; EHRLICH-SCHWOEBEL BARRIERS; GERMANIUM FILMS; GERMANIUM ISLANDS;

SEMICONDUCTING GERMANIUM;

EID: 0032679991     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00069-X     Document Type: Article

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