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Journal of Crystal Growth

Volumn 193, Issue 4, 1998, Pages 535-540

Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy

(6) Liu, J P a Kong, M Y a Li, J P a Liu, X F a Huang, D D a Sun, D Z a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

Adsorption; Desorption; Growth kinetics; Low temperature epitaxy; Si1 xGex alloys; Surface morphology

Indexed keywords

ADSORPTION; COMPOSITION EFFECTS; DESORPTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON ALLOYS; SUBSTRATES; SURFACE PROPERTIES; THERMAL EFFECTS;

DISILANE; LOW-TEMPERATURE EPITAXY; MONOHYDRIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032475543 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00496-5 Document Type: Article

Times cited : (5)

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