Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

Journal of the Electrochemical Society

Volumn 146, Issue 5, 1999, Pages 1971-1976

  Kissinger, G ^a   Grabolla, T ^a   Morgenstern, G ^a   Richter, H ^a   Graf D ^b   Vanhellemont, J ^b   Lambert, U ^b   Von Ammon, W ^b  

^a IHP   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; MOS DEVICES; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

THERMAL PROCESSING;

SILICON WAFERS;

EID: 0032675879     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391875     Document Type: Article

References (19)

1. N. Inoue, J. Osaka, and K. Wada, J. Electrochem. Soc., 129, 2780 (1982).
2. G. Kissinger, D. Gräf, U. Lambert, and H. Richter, J. Electrochem. Soc., 144, 1447 (1997).
3. G. Kissinger, D. Gräf, U. Lambert, J. Vanhellemont, and H. Richter, in Proceedings of the 2nd International Symposium on Advanced Science and Technology and Silicon Materials, JSPS, Kona, HI, p. 302, Nov 25-29, 1996.
4. N. Adachi, H. Nishikawa, Y. Komatsu, M. Hourai, M. Sano, and T. Shigematsu, Mater. Res. Soc. Symp. Proc., 262, 815 (1992).
5. D. Zemke, P. Gerlach, W. Zulehner, and K. Jacobs, J. Cryst. Growth, 139, 37 (1994).
6. G. Gräf, U. Lambert, M. Brohl, A. Ehlert, R. Wahlich, and P. Wagner, J. Electrochem. Soc., 142, 3189 (1995).
7. Y. Kitagawara, K. Aihara, S. Oka, and T. Takenaka, Proc. SPIE-Int. Soc. Opt. Eng., 2638, 263 (1995).
8. J. Vanhellemont, G. Kissinger, K. Kenis, M. Depas, D. Gräf, U. Lambert, and P. Wagner, in Early Stages of Oxygen Precipitation in Silicon, R. Jones, Editor, p. 493, Kluwer Academic Publishers, Dordrecht-Boston-London (1996).
9. J. G. Park and G. A. Rozgonyi, Solid State Phenom., 47-48, 327 (1996).
10. J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny, and C. Claeys, J. Appl. Phys., 77, 5669 (1995).
11. G. Kissinger, J. Vanhellemont, E. Simoen, C. Claeys, and H. Richer, Mater. Sci. Eng., B36, 225 (1996).
12. H. R. Huff, H. F. Schaake, J. T. Robinson, S. J. Baber, and D. Wong, J. Electrochem. Soc., 130, 1551 (1983).
13. H. Richter, in Proceedings of the 1st International Autumn School, GADEST '85, Garzau, Germany, p. 1, Oct 8-18, 1985.
14. J. Furukawa and H. Furuya, Jpn. J. Appl. Phys., 34, L156 (1995).
15. G. Kissinger, J. Vanhellemont, C. Claeys, and H. Richter, Inst. Phys. Conf. Ser., 149, 19 (1996).
16. E. Dornberger and W. von Ammon, J. Electrochem. Soc., 143, 1636 (1996).
17. G. Kissinger, D. Gräf, U. Lambert, T. Grabolla, and H. Richter, Semicond Sci. Technol., 12, 933 (1997).
18. A. Borghesi, B. Pivac, A. Sassella, and A. Stella, J. Appl. Phys., 77, 4169 (1995).
19. M. Itsumi, H. Akiya, T. Ueki, M. Tomita, and M. Yamawaki, J. Appl. Phys., 78, 5984 (1995).