Improved high-temperature and high-power characteristics of 1.3-μm spot-size converter integrated all-selective metalorganic vapor phase epitaxy grown planar buried heterostructure laser diodes by newly introduced multiple-stripe recombination layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1234-1238

  Furushima, Yuji ^a   Yamazaki, Hiroyuki ^a   Kudo, Koji ^a   Sakata, Yasutaka ^a   Okunuki, Yuichiro ^a   Sasaki, Yoshihiro ^a   Sasaki, Tatsuya ^a  

^a NEC CORPORATION   (Japan)

Author keywords

2 D device simulation; Buried heterostructure; InGaAsP InP; Laser diode; Selective MOVPE; Spot size converter

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

BURIED HETEROSTRUCTURE; SPOT SIZE CONVERTER; TWO DIMENSIONAL DEVICE SIMULATION;

SEMICONDUCTOR LASERS;

EID: 0032674537     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1234     Document Type: Article

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