Excellent high-temperature characteristics for 1.3 μm-strained MQW ASM-DC-PBH LDs fabricated by pulse-mode selective MOVPE

IEE Conference Publication

Volumn , Issue 448 /1, 1997, Pages 99-102

  Sakata, Y ^a   Hosoda, T ^a   Sasaki, Y ^a   Inomoto, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HIGH TEMPERATURE PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

SELECTIVE GROWTH TECHNIQUES;

SEMICONDUCTOR LASERS;

EID: 0031334459     PISSN: 05379989     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)