Wide-temperature-range operation of 1.3-μm beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask

IEEE Photonics Technology Letters

Volumn 8, Issue 4, 1996, Pages 479-481

  Aoki, M ^a   Komori, M ^a   Suzuki, M ^a   Sato, H ^a   Takahashi, M ^a   Ohtoshi, T ^a   Uomi, K ^a   Tsuji, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MASKS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; WAVEGUIDES;

BEAM EXPANDER INTEGRATED LASER DIODES; SEMICONDUCTOR WAVEGUIDES; SILICON SHADOW MASKS;

SEMICONDUCTOR LASERS;

EID: 0030127841     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.491089     Document Type: Article

References (9)

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