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Volumn 8, Issue 3, 1996, Pages 325-327

Narrow-beam and power-penalty-free 1.3-μm laser diodes with monolithically integrated waveguide lens formed by selective-area epitaxial growth

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; FABRICATION; FREQUENCIES; LASER BEAMS; LENSES; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

EID: 0030106909     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.481105     Document Type: Article
Times cited : (10)

References (5)
  • 1
  • 4
    • 0028762143 scopus 로고
    • Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition
    • T. Itagaki, T. Kimura, K. Goto, Y. Mihashi, S. Takamiya, and S. Mitsui, "Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition," J. Cryst. Growth, vol. 145, pp. 256-262, 1994.
    • (1994) J. Cryst. Growth , vol.145 , pp. 256-262
    • Itagaki, T.1    Kimura, T.2    Goto, K.3    Mihashi, Y.4    Takamiya, S.5    Mitsui, S.6
  • 5
    • 0026924075 scopus 로고
    • Low Threshold FS-BH Laser on p-InP Substrate Grown by All-MOCVD
    • Y. Ohkura, T. Kimura, T. Nishimura, K. Mizuguchi, and T. Murotani, "Low Threshold FS-BH Laser on p-InP Substrate Grown by All-MOCVD," Electron. Lett., vol. 28, no. 19, pp. 1844-1845, 1992.
    • (1992) Electron. Lett. , vol.28 , Issue.19 , pp. 1844-1845
    • Ohkura, Y.1    Kimura, T.2    Nishimura, T.3    Mizuguchi, K.4    Murotani, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.