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Volumn 8, Issue 3, 1996, Pages 325-327
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Narrow-beam and power-penalty-free 1.3-μm laser diodes with monolithically integrated waveguide lens formed by selective-area epitaxial growth
a a a a a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENTS;
EPITAXIAL GROWTH;
FABRICATION;
FREQUENCIES;
LASER BEAMS;
LENSES;
MASKS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL WAVEGUIDES;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
THERMAL EFFECTS;
FABRY-PEROT LASER DIODES;
TAPERED WAVEGUIDE LENS;
THRESHOLD CURRENTS;
SEMICONDUCTOR LASERS;
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EID: 0030106909
PISSN: 10411135
EISSN: None
Source Type: Journal
DOI: 10.1109/68.481105 Document Type: Article |
Times cited : (10)
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References (5)
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