Structural properties and electrical behaviour of thin silicon oxynitride layers

Microelectronics Reliability

Volumn 38, Issue 2, 1998, Pages 243-247

  Beyer, R ^a   Burghardt, H ^a   Reich, R ^a   Thomas, E ^a   Gessner D, T ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; RAPID THERMAL ANNEALING; SILICA; THIN FILMS; VOLTAGE MEASUREMENT;

THIN SILICON OXYNITRIDE LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031996117     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00184-4     Document Type: Article

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10. y layers, in preparation.