Performance of MOCVD tantalum nitride diffusion barrier for copper metallization

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 29-30

  Sun, S C ^a   Tsai, M H ^a   Tsai, C E ^a   Chiu, H T ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; COPPER; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; TANTALUM COMPOUNDS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

COPPER METALLIZATION; NITROGEN ATOMS; SUBSTRATE TEMPERATURE; TERBUTYLIMIDO-TRIS-DIETHYLAMIDO TANTALUM; THERMAL STABILITY; WAFER TEMPERATURE;

VLSI CIRCUITS;

EID: 0029517176     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)