STMstudy of epitaxial Dy silicides on Si(111) and Si(001) using ultra-sharp tips prepared by ion bombardment

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Kalka, T ^a   Preinesberger, C ^a   Vandre S ^a   Dahne Prietsch M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FLAT SURFACES; SHARP TIP; SI (1 1 1); SI SURFACES; SI(0 0 1); STM STUDY;

ION BOMBARDMENT; IONS; SCREW DISLOCATIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES;

SILICON;

EID: 0344347671     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051300     Document Type: Article

References (3)

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2. S. Vandré, T. Kalka, C. Preinesberger, I. Manke, H. Eisele, M. Dähne-Prietsch, R. Meier, E. Weschke, G. Kaindl: Appl. Surf. Sci. 123/124, 100 (1998)
3. J.P. Ibe, P.P. Bey, Jr., S.L. Brandow, R.A. Brizzolara, N.A. Burnham, D.P. DiLella, K.P. Lee, C.R.K. Marrian, R.J. Colton: J. Vac. Sci. Technol. A 8, 3570 (1990)