Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry

Thin Solid Films

Volumn 349, Issue 1-2, 1999, Pages 135-146

  Strass, A ^a   Bieringer, P ^a   Hansch, W ^b   Fuenzalida, V ^c   Alvarez, A ^c   Luna, J ^c   Martil, I ^d   Martinez, F L ^d   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b HIROSHIMA UNIVERSITY   (Japan)

^c DEPARTAMENTO DE FÍSICA   (Chile)

^d UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Atomic and molecular studies; Deposition process; Plasma processing and deposition; Silicon oxide

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELLIPSOMETRY; EVAPORATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; OXIDATION; OXIDES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; STOICHIOMETRY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

GAS ENHANCED EVAPORATION (GEE); PLASMA ENHANCED EVAPORATION (PEE); PLASMA ENHANCED OXIDATION (PEO); SILICON OXIDE;

THIN FILMS;

EID: 0032668236     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00166-2     Document Type: Article

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