Double doping floating gates improves EPROM yields: The resulting interpoly breakdown improvement eliminates program disturb problems

Semiconductor International

Volumn 20, Issue 12, 1997, Pages 125-130

  Makwana, Jitu ^a   Grula, Beth ^a   Monteilh, Darryl ^a   Tyldesley, Roger ^a   Sorensen, Amy ^a  

^a MOTOROLA INC   (United States)

Author keywords

EPROM reliability; Oxide growth; Polysilicon doping

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); MICROPROGRAMMING; SEMICONDUCTOR DOPING;

ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY (EPROM);

ROM;

EID: 30844460617     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. R. Shiner, J. Caywood and B. Euzent, "Data Retention in EPROMs," 18th Annual Proc., Reliability Physics Symposium, p. 238 (1980).
2. N.R. Mielke, "New EPROM Data-Loss Mechanisms," IRPS, pp.106-113, 1983.
3. D.J. DiMaria and R.D. Kerr, "Interface effects and high conductivity in oxides grown from polycrystalline silicon," Applied Physics Letters, vol. 27, pp. 505-507, 1975.
4. S. Mori, Y. Kaneko, N. Arai, Y. Ohshima, H. Araki, K. Narita, E. Sakagami and K. Yoshikawa, "Reliability study of thin interpoly dielectrics for non-volatile memory application," 28th IRPS Proceedings, pp. 132-144, 1990.