1/f; noise model for MOSTs biased in nonohmic region

Solid State Electronics

Volumn 23, Issue 4, 1980, Pages 325-329

  Vandamme, L K J ^a   de Werd, H M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS;

MOST DEVICES;

TRANSISTORS, FIELD EFFECT;

EID: 0019009162     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(80)90199-9     Document Type: Article

References (8)

1. Characterization of low 1/f noise in MOS transistors
2. Proc. 6th Conf. Solid-St. Dev
3. Experimental study of flicker noise in m.i.s. field-effect transistors
4. Conductance noise investigations on symmetrical planar resistors with finite contacts
5. Lattice scattering causes 1/ƒ noise