Investigation of acceptors in p-type WS 2 by standard and photo-assisted scanning tunneling microscopy/spectroscopy

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 564-569

  Sommerhalter, Ch ^a   Matthes, Th W ^a   Boneberg, J ^b   Lux Steiner, M Ch ^a   Leiderer, P ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

Doping; Photovoltaic effect; Scanning tunneling microscopy; Scanning tunneling spectroscopy; Semiconductors; Transition metal dichalcogenides

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; IMAGING TECHNIQUES; MOLECULAR STRUCTURE; PHOTOVOLTAIC EFFECTS; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; TUNGSTEN COMPOUNDS;

ACCEPTORS; CURRENT IMAGING TUNNELING SPECTROSCOPY; LOCAL CHARGE DISTRIBUTION; LOCAL SURFACE PHOTOVOLTAGE; PHOTO ASSISTED SCANNING TUNNELING SPECTROSCOPY; PHOTOINDUCED TUNNELING CURRENT; TOPOGRAPHIC DEPRESSIONS;

SINGLE CRYSTALS;

EID: 0032664243     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00866-6     Document Type: Article

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