Imaging of dopants in surface and sub-surface layers of the transitionmetal dichalcogenides WS2and WSe2by scanning tunneling microscopy

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Matthes, Th W ^b   Sommerhalter, Ch ^b   Rettenberger, A ^a   Bruker, P ^a   Boneberg, J ^a   Lux Steiner, M Ch ^b   Leiderer, P ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; VAN DER WAALS FORCES;

BAND-BENDING EFFECTS; CHARGE CARRIER INJECTION; CURRENT TRANSPORT MECHANISM; ELECTROCHEMICAL PROCESS; INTRINSIC SURFACES; LAYERED STRUCTURES; MAJORITY CHARGE CARRIERS; STATISTICAL DISTRIBUTION;

SCANNING TUNNELING MICROSCOPY;

EID: 0005066548     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/PL00022813     Document Type: Article

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