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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1227-1229

Carrier transport effects in 1.3 μm multiple quantum well InGaAsP laser design

(3) Silfvenius, Christofer a Landgren, Gunnar a Marcinkevicius, Saulius a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

1.3 m; Hole distribution; InGaAsP; InP; Laser; MQW

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

AUGER RECOMBINATION RATE; HOLE TRANSPORT; INDIUM GALLIUM ARSENIDE PHOSPHIDE; INTERNAL LOSSES; THRESHOLD DENSITY; VALENCE BAND;

QUANTUM WELL LASERS;

EID: 0032663844 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1227 Document Type: Article

Times cited : (2)

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