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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 3 A, 1999, Pages 1339-1342

Molecular beam epitaxial growth of ZnSe films on vicinal GaAs(110) substrates

(4) Maehashi, Kenzo a Morota, Naohiko a Murase, Yasuhiro a Nakashima, Hisao a

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Photoluminescence; Reflection high energy electron diffraction; Vicinal GaAs(110) substrates; ZnSe films

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE STRUCTURE;

CRYSTAL QUALITY; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032662405 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.1339 Document Type: Article

Times cited : (3)

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