CVD growth mechanism of 3C-SiC on Si substrates

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 183-186

  Ishida, Y ^a   Takahashi, T ^a   Okumura, H ^a   Yoshida, S ^a   Sekigawa, T ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

3C SiC; APCVD; Growth Mechanism; LPCVD; Mass Transfer Process; Secondary Nucleation; SiH2; SiH4; Surface Reaction Process

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MASS TRANSFER; MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON CARBIDE;

EID: 3743131868     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.183     Document Type: Article

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