Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 434, Issue 1, 1999, Pages 44-56

  Rogalla, M ^a   Runge, K ^a  

^a Universtat Regensburg   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRIC FIELDS; LEAKAGE CURRENTS; PARTICLE DETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

FIELD ENHANCED ELECTRON CAPTURE; SEMICONDUCTOR PARTICLE DETECTORS;

SEMICONDUCTOR COUNTERS;

EID: 0032654053     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00431-3     Document Type: Article

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