Influence of contacts and substrate on semi-insulating GaAs detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 395, Issue 1, 1997, Pages 71-75

  Irsigler, R ^a   Geppert, R ^a   Goppert R ^a   Ludwig, J ^a   Rogalla, M ^a   Runge, K ^a   Schmid, Th ^a   Webel, M ^a   Weber, C ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

CHARGE COLLECTION EFFICIENCY;

PARTICLE DETECTORS;

EID: 0031212785     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00633-5     Document Type: Article

References (10)

1. Status report of the RD8 collaboration, CERN Internal Report CERN/LHCC 95-57, 1995.
2. P.G. Pelfer et al. (Eds.), Proc. 3rd GaAs Workshop, San Miniato 1995, World Scientific, 1996.
3. J. Chen et al., Nucl. Instr. and Meth. A 369 (1996) 62.
4. D.K. Schroder, Semiconductor Material and Device Characterization, Wiley, 1990.
5. H. Norde, J. Appl. Phys. 50 (1979) 5052.
6. K. Sato, Y. Yasumura, J. Appl. Phys. 58 (9) (1985) 3655.
7. M. Missous, E.H. Rhoderick, D.A. Woolf, S.P. Wilkes, Semicond. Sci. Technol. 7 (1992) 218.
8. H.K. Henisch, Semiconductor Contacts, Oxford University Press, Oxford, 1984.
9. M. Rogalla et al., Nucl. Instr. and Meth. A 365 (1995) 273.
10. H. Ryssel, I. Ruge, Ionenimplantation, Teubner, Stuttgart, 1978.