The impact of deep acceptors on the performance of VPE-GaAs X-ray detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 410, Issue 1, 1998, Pages 92-95

  Rogalla, M ^a   Lien, Y ^a   Percival, R ^a   Hornung, M ^a   Ludwig, J ^a   Irsigler, R ^a   Runge, K ^a   Soldner Rembold A ^a   Meinhardt, J ^a   Feldgen, T ^a   Fiederle, M ^a   Benz, K W ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

p type VPE GaAs; X ray detectors

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRIC SPACE CHARGE; HALL EFFECT; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY; VOLTAGE MEASUREMENT; X RAYS;

LOW PRESSURE VAPOR PHASE EPITAXY (LPVPE); SEMICONDUCTOR DETECTORS; X RAY DETECTORS;

RADIATION DETECTORS;

EID: 0032093498     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00171-5     Document Type: Article

References (8)

1. D. Alexiev, K.S.A. Butcher, Nucl. Instr. and Meth. A 317 (1992) 111.
2. R. Irsigler, E. Bauser et al., in: P.C. Pelfer, (Ed.), Gallium Arsenide and Related Compounds, World Scientific, Singapore, 1995.
3. J. Camassel, J.P. Laurenti et al., J. Electron Mater. 20 (1) (1991).
4. AIXTRON GmbH, Semiconductor Technology, Kackerstr. 15-17, 52072 Aachen, Germany.
5. Landolt-Börnstein, vol. 22, O. Madelung, (Ed.), Springer, Berlin, 1989.
6. H.P. Gislason et al., J. Appl. Phys. 58 (1) (1985) 240.
7. J.F. Ziegler, J.B. Biersack, Transport of Ions in Matter (TRIM 03).
8. M. Rogalla et al., Influence of the compensation in SI-GaAs on the particle detector performance, Proc. SIMC 9, IEEE, 1996.