Circular and linear enhancement-mode 6H-SiC MOSFETs for high temperature applications

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 148-153

  Schmid, U ^a   Sheppard, S T ^b   Wondrak, W ^a  

^a DAIMLER AG   (Germany)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THRESHOLD VOLTAGE;

FERMI POTENTIAL; INVERSION LAYER MOBILITY;

MOSFET DEVICES;

EID: 0032648609     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0005-2     Document Type: Article

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