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Volumn 10, Issue 6, 1989, Pages 274-276

Collector Offset Voltage of Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY;

EID: 0024682740     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.31744     Document Type: Article
Times cited : (66)

References (9)
  • 2
    • 4544288716 scopus 로고
    • Heterojunction bipolar transistors for microwave and millimeterwave integrated circuits
    • P. M. Asbeck et al., “Heterojunction bipolar transistors for microwave and millimeterwave integrated circuits,” IEEE Trans. Electron Devices, vol. ED-34, pp. 2571–2579, 1987.
    • (1989) IEEE Trans. Electron Devices , vol.10 , pp. 30-33
  • 3
    • 4544288716 scopus 로고
    • Heterojunction bipolar transistors for microwave and millimeterwave integrated circuits
    • U. K. Mishra, et al., “48 GHz AlInAs/GaInAs heterojunction bipolar transistors,” in IEDM Tech. Dig., 1988, pp. 873–875.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , pp. 2571-2579
    • Asbeck, P.M.1
  • 4
    • 0024175133 scopus 로고
    • 48 GHz AlInAs/GaInAs heterojunction bipolar transistors
    • J. R. Hayes, A. C. Gossard, and W. Wiegmann, “Collector/emitter offset voltage in double heterojunction bipolar transistors,” Electron. Lett., vol. 20, pp. 766–767, 1984.
    • (1988) IEDM Tech. Dig. , pp. 873-875
    • Mishra, U.K.1
  • 5
    • 0021496771 scopus 로고
    • Collector/emitter offset voltage in double heterojunction bipolar transistors
    • N. Chand, R. Fischer, and H. Morkoç, “Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors,” Appl. Phys. Lett., vol. 47, pp. 313–315, 1985.
    • (1984) Electron. Lett. , vol.20 , pp. 766-767
    • Hayes, J.R.1    Gossard, A.C.2    Wiegmann, W.3
  • 6
    • 36549096960 scopus 로고
    • Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors
    • T. Won, C. K. Peng, J. Chyi, and H. Morkoç, “In0.52Al0.48As/ In0.53Ga0.47As p-n-p heterojunction bipolar transistor by molecular beam epitaxy,” IEEE Electron Device Lett., vol. 9, pp. 334–337, 1988.
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 313-315
    • Chand, N.1    Fischer, R.2    Morkoc, H.3
  • 7
    • 0024051029 scopus 로고
    • In0.52Al0.48As/ In0.53Ga0.47As p-n-p heterojunction bipolar transistor by molecular beam epitaxy
    • T. Won, C. W. Litton, H. Morkoc, and A. Yariv, “High gain GaAs/ AlGaAs n-p-n HBT’s grown on Si by molecular beam epitaxy,” IEEE Electron Device Lett., vol. 9, pp. 405–407, 1988.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 334-337
    • Won, T.1    Peng, C.K.2    Chyi, J.3    Morkoc, H.4
  • 8
    • 0024055361 scopus 로고
    • High gain GaAs/ AlGaAs n-p-n HBT's grown on Si by molecular beam epitaxy
    • T. H. Ning and D. D. Tang, “Method for determining the emitter and base series resistances of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 409–412, 1984.
    • (1988) IEEE Electron Device Lett. , vol.9 , pp. 405-407
    • Won, T.1    Litton, C.W.2    Morkoc, H.3    Yariv, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.