Base and collector resistances in heterojunction bipolar transistors

Solid-State Electronics

Volumn 41, Issue 11, 1997, Pages 1739-1743

  Anholt, R ^a   Bozada, C ^b   Desalvo, G ^b   Dettmer, R ^b   Ebel, J ^b   Gillespie, J ^b   Jenkins, T ^b   Havasy, C ^b   Ito, C ^b   Nakano, K ^b   Pettiford, C ^b   Quach, T ^b   Sewell, J ^b   Via, D ^b  

^a Gateway Modeling Inc   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; EXPERIMENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS;

BASE AND COLLECTOR RESISTANCES; REVERSE GUMMEL;

SOLID STATE DEVICES;

EID: 0031275293     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00150-0     Document Type: Article

References (3)

1. Fukui, H., Bell Sys. Tech. J., 1979, 58, 771-797.
2. Anholt, R., Electrical and thermal characterization of MESFETs, HEMTs, and HBTs, Artech, Norwood, Mass., 1994, ch. 10.
3. Hafizi, M. E., Crowell, C. R. and Gruppen, M. E., IEEE Trans. Elect. Dev., 1990, 37, 2121.